Abstract
Recent studies of deep defect relaxation processes in a-Si:H using capacitance transient measurements are reported. First, to disprove any significant role of from contact effects, nearly identical transients for samples deposited on p + crystalline Si with a blocking back contact or on n + crystalline Si substrates with single junction characteristics have been obtained. Similar transients are also obtained for a film deposited on a thin n + a-Si:H layer over a Cr coated substrate. Second, the effects of incorporating temperature steps during the time evolution of the transients have been investigated. Such transients are compared to the case where the emission of charge is allowed to proceed isothermally. These results verify the existence of a defect distribution whose thermal emission properties evolve in time.
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