Abstract
A modulated photocarrier grating technique (MPG) has been used to measure some properties of amorphous silicon samples. The intermediate region where neither the lifetime, τ, nor the dielectric relaxation time, τ d, are dominant and local charge neutrality may not be maintained has been investigated. Light intensity dependence of the small-signal lifetime estimated from a modulated photocurrent technique (MPC) was also studied. A qualitative agreement has been found between the data and the MPG theory which shows that this technique measures the response time/relaxation time ratio. Based on the results we suggest an overestimate of the ambipolar diffusion length obtained by the steady-state photocarrier grating technique (SSPG) in these samples which is an indication that local charge neutrality is not preserved.
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