New Results on the Electrical Activity of <i>3d</i>-Transition Metal Impurities in Silicon

Abstract

In silicon several electronic levels are known which can be attributed to transition metals. Ignorance persists however about the specific nature of the defect centers. Some progress was made recently on identifying electronic levels from substitutional or interstitial lattice sites and on identifying levels from defect complexes. The sensitive Laplace DLTS technique allows us to determine depth profiles or the influence of the electrical field on the emission rate with unparalleled accuracy. Three examples will be discussed in this short review: The identification of the CoB pair, a reinterpretation of the Ti DLTS spectrum and the complex formation of interstitial Cu with substitutional Cu as the nucleation site.