Abstract
A new reactor has been designed for atmospheric pressure MOVPE growth of InP and InGaAsP alloys. This has a chimney geometry with a sidearm added for susceptor rotation and fully mechanized substrate loading. A high aspect ratio rectangular body permits growth on a 50 mm diameter wafer with relatively high gas velocities at modest flows. A two-step growth of InP on GaAs substrates has been used to evaluate thickness uniformity in this reactor. Two flow regimes have been identified from this study. At low flows, thermal buoyancy effects are important and the growth uniformity is improved by use of a dense carrier gas (N2H2 mixture) and cooling of the reactor wall opposite the substrate. At high flows the best thickness uniformity is obtained with a pure H2 carrier gas without the opposite wall cooling.
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