Abstract
This work presents the preliminary experimental results of Pb(ZrxTi1−x)O3 (PZT) thin films preparation to develop a new combinatorial process by chemical solution deposition (CSD) method. PZT thin films were fabricated from the PbZrO3 (PZ) and PbTiO3 (PT) multilayers on a substrate of Si/SiO2/Ti/Pt. The precursor PT and PZ solutions were coated in different sequences, (i) in the PT start sequence and (ii) in the PZ start sequence, and with different PT and PZ concentrations. It was found that the deposition sequence of PT and PZ led to the differences in composition, microstructure, texture, and ferroelectric property of the resultant thin films. The PT start deposition was suitable for preparation of the PZT thin films, while the PZ start deposition caused composition deviation and bad ferroelectric property. The postannealing had little effect for the formation of the PZT thin films from the multi-PT and PZ layers. A single perovskite phase of PZT can be obtained from the deposited multi-PT and PZ layers even without any postannealing when concentrations of the precursor PT and PZ solution are smaller than 0.025 M and the deposition sequence is in the PT start sequence. This method would be a constructive way to develop and study other thin film materials systems.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
