Abstract
The new Pt silicide formation method using the reaction between Pt film and SiH4 has been proposed. It has been found that Pt silicide is formed by the reaction with SiH4 at a low temperature range of 250–400 °C. Parabolic relationships of silicide growth using the reaction with SiH4 as well as the growth using the reaction between Pt and substrate Si are confirmed. Pt silicide formation with SiH4 is less influenced by oxygen contamination than the formation by the reaction between Pt and substrate Si.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.