Abstract
A field-effect transistor platform has been designed and fabricated from silicon that allows for the testing of organic semiconductors (OS) as potential materials for organic field-effect transistors (OFET) and as the gate conductor in chemically sensitive field-effect transistors (CHEMFET). Once the OS is deposited, the device can be operated in either mode. This platform should aid in the search for the semiconductor field effect in a variety of organic materials. The effects of contact resistance, surface conductivity, and gate leakage current have been demonstrated and analyzed. No semiconductor field effect has been observed in OFET mode using poly(phenylenesulfidephenyleneamine) as the organic semiconductor.
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