Abstract
In this work we have applied the low-energy high-density low-pressure radio-frequency inductively coupled argon plasma treatment to the Cu(In,Ga)(S,Se)2 thin films grown on glass substrates using a selenization/sulfurization process. This approach allowed to obtain nanowires with an average height varying from 120 to 240 nm and with a 15-50 nm diameter. It is shown that the mechanism of the nanowire formation is plasma-assisted vapor-liquid-solid growth in combination with micromasking with In-Ga alloy nanoinclusions serving both as catalyst droplets and micromasks.
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