Abstract
This study presents a novel pixel circuit that uses only n-type low-temperature polycrystalline-silicon (poly-Si) thin-film transistors ((LTPS-TFTs) to simplify the fabrication process of active-matrix organic light-emitting diode (AMOLED) displays. The proposed pixel circuit consists of five switching TFTs, one driving TFT (DTFT), and two capacitors. The output current and the OLED anode voltage error rates are about 3% and 0.7%, respectively. Thus, the pixel circuit can realize uniform output current with high immunity, to the poly-Si TFT threshold voltage deviation. The proposed novel pixel design has great potential for use in large-size, high-resolution AMOLED displays.
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