Abstract
We report the first photopatternable, nonvolatile memory consisting of high-temperature polyimide (PI), poly(hexafluoroisopropylidenediphthalimide-4-cinnamoyloxytri-phenylamine) (6F-HTPA-CI), and we demonstrate the successful fabrication and programmable operation of ‘write-read-erase’ memory devices based on nanoscale thin films of 6F-HTPA-CI. The PI thin film enables scalable fine patternability, providing lines and spaces with excellent pattern fidelity. Isolated individual memory devices were successfully fabricated on a bottom electrode via a sequential process of coating, photopatterning, top electrode deposition, developing, rinsing and drying. The 6F-HTPA-CI cells exhibited excellent nonvolatile memory performances in three different modes (unipolar permanent, unipolar flash and bipolar flash memories), regardless of photo-exposure doses. The switching-ON (writing) voltage was in the range of ±1.5 to ±2.0 V, and the switching-OFF (erasing) voltage was in the range of ±0.3 to ±0.8 V; these voltages are quite low, indicating that power consumption by the devices during operation is low. The ON/OFF current ratio of the devices was in the range of 104–109. Overall, the photopatternable PI 6F-HTPA-CI opens up the possibility of low-cost mass production of high-performance, high-speed, energy-efficient, permanent or rewritable high-density nonvolatile polymer memory devices suitable for future advanced electronics in highly integrated systems.
Highlights
IntroductionNonvolatile memory materials have recently attracted considerable attention because of their broad applicability in future microelectronic devices such as flexible displays, electronic skin, radio-frequency identification or near-field communication tags and wearable stretchable sensors into which memory devices are incorporated.[1,2,3,4,5] The integration of memory chips with logic chips, displays and sensors in a single, flexible platform is one of the most important challenges for the realization of future microelectronics.[4,5]Resistive random access memory produced from silicon- or metaloxide-based materials is an emerging class of high-performance nonvolatile memory.[6,7] these memory materials are mechanically incompatible with flexible, bendable or stretchable substrates because of their stiff and brittle nature.Organic small-molecule-based nonvolatile memory materials have been proposed as alternative candidates for flexible data-storage devices.[8,9,10,11,12,13] this approach has been found to have restrictions such as insufficient mechanical stretchability due to the weak and brittle nature of the material and poor interfacial adhesion, long process times, low-cost efficiency due to high-temperature evaporation in vacuum and limited area deposition, and material degradation.[8,9,10,11,12,13]
We report the first photopatternable, nonvolatile memory consisting of high-temperature polyimide (PI), poly (6F-HTPA-CI), and we demonstrate the successful fabrication and programmable operation of ‘write-read-erase’ memory devices based on nanoscale thin films of 6F-HTPA-CI
As a result of the molecular design and synthesis effort described above, we here introduce a new photopatternable, digital-memoryprogrammable, high-temperature PI, poly(hexafluoroisopropylidenediphthalimide-4-cinnamoyloxytriphenylamine) (6F-HTPA-CI), and we demonstrate the successful fabrication and programmable operation of ‘write-read-erase’ memory devices based on nanoscale thin films of 6F-HTPA-CI
Summary
Nonvolatile memory materials have recently attracted considerable attention because of their broad applicability in future microelectronic devices such as flexible displays, electronic skin, radio-frequency identification or near-field communication tags and wearable stretchable sensors into which memory devices are incorporated.[1,2,3,4,5] The integration of memory chips with logic chips, displays and sensors in a single, flexible platform is one of the most important challenges for the realization of future microelectronics.[4,5]Resistive random access memory produced from silicon- or metaloxide-based materials is an emerging class of high-performance nonvolatile memory.[6,7] these memory materials are mechanically incompatible with flexible, bendable or stretchable substrates because of their stiff and brittle nature.Organic small-molecule-based nonvolatile memory materials have been proposed as alternative candidates for flexible data-storage devices.[8,9,10,11,12,13] this approach has been found to have restrictions such as insufficient mechanical stretchability due to the weak and brittle nature of the material and poor interfacial adhesion, long process times, low-cost efficiency due to high-temperature evaporation in vacuum and limited area deposition, and material degradation.[8,9,10,11,12,13]. Resistive random access memory produced from silicon- or metaloxide-based materials is an emerging class of high-performance nonvolatile memory.[6,7] these memory materials are mechanically incompatible with flexible, bendable or stretchable substrates because of their stiff and brittle nature. Organic small-molecule-based nonvolatile memory materials have been proposed as alternative candidates for flexible data-storage devices.[8,9,10,11,12,13] this approach has been found to have restrictions such as insufficient mechanical stretchability due to the weak and brittle nature of the material and poor interfacial adhesion, long process times, low-cost efficiency due to high-temperature evaporation in vacuum and limited area deposition, and material degradation.[8,9,10,11,12,13]
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
