Abstract
A fluorite-related phase of Gd2O3, with a tetragonal unit cell of a=5.65 Å and c=5.37 Å, was attained in this study. The new phase was found either in a thin Gd2O3 film (∼18 Å), which was epitaxially grown on GaAs(100), or in a disordered (by mild Ne+-ion sputtering) and recrystallized (by UHV annealing) thin cubic α-Gd2O3 film. The structural characteristics of the new oxide films were studied using in situ reflection high-energy electron diffraction, secondary-electron imaging, and single-crystal x-ray diffraction.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
