New parameter extraction method based on split C–V measurements in FDSOI MOSFETs

Abstract

A new parameter extraction methodology based on split C–V is proposed for FDSOI MOS devices. To this end, a detailed capacitance theoretical analysis is first conducted emphasizing the usefulness of the Maserjian function. Split C–V measurements carried out on various FDSOI CMOS technologies show that the Maserjian function exhibits a power law dependence with inversion charge as ∝Qi−2 whatever the carrier type and gate oxide thickness. This feature enables to confirm the validity of a two-parameter simple capacitance model and allows for a reliable MOSFET parameter extraction in FDSOI devices.