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Abstract
We have found that the photoluminescence peak energy of n-type GaAs1−xPx crystals in the range 0.3<x<0.5 is exceptionally sensitive to the carrier concentration even in lightly doped material (< 1017 carriers cm−3). For all the crystals examined, the room-temperature photoluminescence spectrum consists of a single band corresponding to near band-edge emission. In crystals containing less than 1016 carriers cm−3, the peak energy variation with crystal composition lies close to a straight line connecting the direct band gaps of GaAs and GaP. In crystals deliberately doped with sulfur or selenium to concentrations in the 1016–1018-cm−3 range, the variation is close to the quadratic expression for band-gap variation with a bowing parameter of c =0.21.
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