Abstract
This work investigates the hot-carrier effect (HCE) in partially depleted 0.1 µm SOI nMOSFETs. Hot-carrier degradation was investigated with respect to body-contact nMOSFET (BC-SOI) and floating-body nMOSFET without body contact (FB-SOI). It was found that hot-carrier-induced degradation exerts different influences on the drive capacities as well as subthreshold characteristics of FB-SOI and BC-SOI nMOSFETs. In FB-SOI nMOSFET, the floating body effect (FBE) and parasitic bipolar transistor effect (PBT) affect hot-carrier-induced degradation of device characteristics.
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