Abstract
Degradation in gate-induced drain leakage (GIDL) current of n-MOSFET's with conventional SiO/sub 2/ and oxynitride as gate dielectrics under hot-carrier stresses at different gate voltages is investigated. It is found that the shift of GIDL current is very sensitive to gate voltage and is maximum under a stress with V/sub G/=0.5 V/sub D/ even for a short stress time. This might result from hot electrons captured by fast acceptor-like interface states, thus revealing that the quality of the Si/SiO/sub 2/ interface is an important on the reduction of GIDL shift under hot-carrier stress. Unlike conventional gate-oxide devices, the degradation can he greatly suppressed in nitrided-oxide devices, especially reoxidized-nitrided-oxide devices due to the considerably improved quality of both the gate oxide and Si/SiO/sub 2/ interface by thermal nitridation and ensuing reoxidation.
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