Abstract

A new multipactor saturation mechanism is presented for high power microwave devices in the presence of dielectrics. Recent measures have shown that the positive charge deposited on a dielectric as a consequence of the secondary electron emission causes the reduction of its secondary electron yield. This work shows a new multipactor dynamics within a partially filled parallel-plate waveguide where both the decrease of the secondary electron yield with the charge on the dielectric and the subsequent electrostatic field produced are taken into account. The results obtained show that these two mechanisms predict the multipactor saturation as well as some differences with the classical resonance theory when charged dielectrics come into play.

Highlights

  • Multipactor is often considered a deleterious phenomenon occurring in vacuum where very intense electromagnetic fields are used as a consequence of the secondary electron emission (SEE)

  • Recent measures have shown that the positive charge deposited on a dielectric as a consequence of the secondary electron emission causes the reduction of its secondary electron yield

  • SIMULATION RESULTS In order to understand the influence of the dielectric charge on the multipactor saturation, we first analyze the dynamics for multipactor of order one comparing two different responses to the decay of the SEY with the accumulated charge

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Summary

INTRODUCTION

Multipactor is often considered a deleterious phenomenon occurring in vacuum where very intense electromagnetic fields are used as a consequence of the secondary electron emission (SEE). The results of this work predict the saturation of the electron population nearly above the multipactor breakdown threshold due to accumulation of the positive charges on the dielectric under the mono-energetic SEE approximation. This work shows that an initial charge deposited on the dielectric modifies the multipactor power threshold with respect to the case where the slab is electrically neutral. This feature of the breakdown in the presence of dielectrics is very important for certain insulators prone to accumulate an electric charge going unnoticed during the manufacturing process of the RF devices, like the Teflon. Discussing the most important insights presented, emphasizing the interest of this study on other plasma applications

MULTIPACTOR MODEL
FILLING FACTOR CLOSE TO ONE
Resonance study
Vx À Np 2
Impact velocity
Returning
Stability factor
Electric field threshold
VARIATION OF THE SEY WITH THE CHARGE
SIMULATION RESULTS
CONCLUSIONS
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