Abstract
New model of the pinning potential barrier in multilayered HTc superconductors is presented, based on geometrical approach to the capturing interaction of pancake-type vortices with nano-sized defects. Using the above model the transport current flow phenomena in these materials, especially the current–voltage characteristics and critical current density, have been considered. Details of theoretical analysis are given, including the derivation of basic mathematical equations describing the potential barrier as a function of transport current intensity and the initial position of captured pancake vortex. Computer simulation has been performed of the influence of transport current amplitude on the potential barrier height for various sizes of pinning centers and initial pancake vortex position as well as the influence of fast neutrons irradiation creating nano-sized defects on critical current of HTc layered superconductor.
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