Abstract
The In2O3-SnO2 (ITO) solid solution system was formulated and a model for the ITO material derived. The model starts from the formation of a solid solution — giving rise to a doping effect up to the solid solubility of tin in the In2O3 lattice, together with the formation of a new associated vacancy (VInVo)x. The mechanism is discussed by which the (VInVo)x dissociates, reducing the number of free carriers through trapping, which in turn affects the electrical characteristics.
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