Abstract
New models for the characterization of volume traps in enhancement-mode field-effect transistors by current deep level transient spectroscopy are proposed. First, a simple model that is based on the use of the experimentally measured transconductance of the device is studied. Consequently it includes, in principle, the dependence of the mobility with gate bias and therefore allows us to avoid any approximation in the gate voltage dependence of the mobility. Different improvements of this first model are then proposed, compared, and discussed with respect to previous works. Finally a more complete model that requires less approximations is derived. These different approaches are finally used for the characterization of a deep trap in a bulk enhancement-mode field-effect transistor.
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