New methods for using the Q-V technique to evaluate Si-SiO2 interface states

Abstract

The Q-V technique applied to metaloxide silicon capacitors makes it possible to measure the silicon-oxide interface potential directly with only a few simple assumptions. From these data of interface potential versus gate voltage it is possible to calculate the interface state distribution. The Q-V technique can be used over the entire band gap range and separate n- and p-type samples are not required. New simplified techniques for doing this are presented. The measurements can also be used to determine the band gap of the semiconductor which should have application for the study of silicon-germanium alloys.