New methods for determining the three-dimensional distribution of hydrogen in amorphous SiH

Abstract

In addition to the electron excited Auger spectra of Si (LMM), keV Ar + ion bombardment of SiH produces new peak at 86 eV. A correlation appears to exist between the intensity of this new peak and H content. Ion-induced Auger electron spectroscopy has been proposed for the study of homogeneity of H in amorphous SiH. Quantitative analyses of H in amorphous SiH deposited by glow discharge in SiH 4 and reactive sputtering have been carried out by Rutherford backscattering spectrometry, which can detect at least 5 at.% H atoms in SiH through the change of stopping power.