Abstract
The total dose radiation effect (TDRE) has been regarded as one of the most harmful factors to degrade MOS devices. In this paper, a simple new method called avalanche injection of holes is introduced to simulate or displace the radiation experiments to determine the TDRE of MOS devices. Like TDRE, avalanche injection of holes can also provide sufficient holes to flow into the gate oxide layer where a small part of these holes can be trapped in the defects and cause a shift of flat-band voltage (?VFB ) of MOS device, we can conclude that the structure which has a greater ?VFB would be easier to be affected by TDRE.
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