Abstract

Come up with a new method of rocking curves analysis, its using the software of the double-crystal X-ray diffraction rocking curves analysis to simulate vertical cavity surface emitting laser structure. Simulate the X-ray diffraction rocking curve of each part of laser structure, and then compare with the diffraction rocking curve of the overall structure in order to acquire the adscription of each diffraction peak, the method can also be applied to other semiconductor lasers. Compared with conventional PDF card library about diffraction position of all material peaks, the method has the advantages of fast and accurately to distinguish, high efficiency. In the end, the X-ray diffraction rocking curves analysis method is applied to the MOCVD growth of GaAs based vertical cavity surface emitting laser, and quoting strain relaxation mechanisms for explaining the reasons for the partial peak drifting.

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