Abstract
Kikuchi electron diffraction patterns are used extensively to determine crystal orientations via transmission electron microscopy (TEM) or in the electron backscattering pattern (EBSP) mode of scanning electron microscopy (SEM). A new method is presented that is capable of finding crystal orientations, the camera length, and the projection center from only one pattern per grain using a least-squares technique. This method eliminates the need to perform an alignment with a reference crystal in the backscattering mode. Application to a Σ = 13a silicon bicrystal is presented for TEM patterns and EBSP's. A complete analysis of the propagation of random measurement errors into the disorientation axis/angle pair is carried out. The root mean square deviation from the nominal disorientation angle is found to be 0.3°in the case of TEM and 0.5°in the case of EBSP. The root mean square inclination between the nominal and measured disorientation axis is found to be 1°in the case of TEM and 0.5°in the case of EBSP.
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