Abstract
A simple method for the prediction of the heavy ion-induced single event effect cross-section based on proton experimental data has been proposed, which is convenient for flip chips. The method relies on the effective LET spectrum of protons in the sensitive layer of microelectronic devices. Two chips using different packaging technologies are selected to verify this method, and the results obtained by our method are consistent with the heavy ion experimental data. The principle of this method has been analyzed in depth, and the limitations are also given.
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