Abstract
In the experimental characterization of deep-level trapping centers in semiconductors, the popular capacitance and current transient techniques have reached a degree of maturity. However, two major limitations remain: (i) capture rates are often too fast to be measured by majority-carrier methods, and (ii) optical excitation and specially designed samples are necessary for certain traps. In this work we give detailed analysis and demonstration of our new minority-carrier capture techniques to overcome these limitations. Combined with existing methods, which are also illustrated, this allows purely electrical measurement of all capture and emission rates of deep levels. We explain the physics underlying our suggestion that in most cases even for a multilevel deep trap all one needs is a single p-n junction to obtain the complete set of data.
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