Abstract
Si was irradiated with 209 MeV Kr ions on an (010) oriented surface. Then atomic force microscopy (AFM) was used to measure the roughness on the adjacent (100) plane (the original wafer surface). The distance on this later plane is called “depth” as measured from the (010) (100) edge. Good agreement is found in projected range values between AFM, spreading resistance (SR) data, and Monte Carlo (TRIM) simulation. Four distinct damage zones are found: zone A, dominated by electronic stopping effects; zone B, electronically assisted elastic collisions; zone C, dominant nuclear stopping; and zone D, defects created by the channeled fraction of the beam.
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