Abstract
A new method using temperature dependent shared series resistance in a pair of devices with common drain configuration is proposed to measure self-heating (SH) in advanced MOSFETs. The proposed measurement technique depends on the intrinsic series resistance and is not limited to the spatial proximity between the heater and the sensor. The developed method demonstrated on the silicon-on-insulator (SOI) MOSFETs reveals that the more accurate SH assessment can be obtained compared to other methods that are sensitive to the distance from heat source. Furthermore, the extraction of intrinsic series resistance allows to quantify the process-induced variability of the contact resistance.
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