Abstract
Pt/Bi4Ti3O12(001)/Bi2SiO5(100)/Si(100) structures have been fabricated by the metal-organic chemical vapor deposition (MOCVD) at 500°C. Bi2SiO5 film is used as a buffer layer to grow ferroelectric Bi4Ti3O12 films because of its relatively high dielectric constant (εr=30). The memory window has a C-V characteristic of about 0.8 V, and the retention time estimated by the zero-bias capacitance for the Pt/100-nm-Bi4Ti3O12/30-nm-Bi2SiO5/Si/Al structure is more than 11 days.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
