New interferometric measurement technique for small diameter TSV

Abstract

High aspect ratio through silicon vias (TSV) present a challenge for measurement of bottom critical dimension (BCD) and depth. TSVs smaller than 5 micron diameter with greater than 12:1 depth to BCD aspect ratio have particularly poor signal to noise ratio in the measured signal. This paper proposes a method for improving the interferometric measurement of these very small and high-aspect ratio TSVs with data showing the feasibility of measuring both BCD and depth of 19:1 aspect ratio TSVs. This work demonstrates the capability to analyze the scanning white-light interferometry (SWLI) signal for such high aspect ratio TSV BCD and depth measurements with >0.95 R 2 correlation to reference metrology obtained through cross section SEM. Precision of within 2.5% of nominal BCD and within 0.1% of nominal depth was demonstrated for 10x repeatability measurements.