Abstract

A series of ordered mesoporous FeMn bimetal oxides (OMFMs) were fabricated by using a novel inverse micelle method, and the texture, nanostructure and interface chemistry properties of OMFMs were closely correlated to the calcination temperature. Due to the amorphous regular inner-connected nanostructure and bimetallic synergistic effect, the obtained OMFMs exhibited superior arsenic sequestration performance than pure mesoporous Fe oxides (PMF) and Mn oxides (PMM). The optimum ratio of Fe/Mn and calcination temperature for arsenic removal was 3/1 and 350 °C (OMFM-3), and the maximum As(III) and As(V) adsorption capacities of OMFM-3 were 174.59 and 134.58 mg/g, respectively. Solution pH value negligibly affected the uptake of arsenic (ranged from 3.0 to 7.0), while SiO32−/PO43− ions and humic acid (HA) displayed significant inhibitory effect on arsenic removal by OMFM-3. According to the mechanism of arsenic removal, which simultaneously analyzed the arsenic redox transformation in aqueous phase and on solid phase interface, it was concluded that manganese oxides in OMFM-3 mainly played the role as a remarkable As(III) oxidant in water, whereas iron oxides dominantly acted as an excellent arsenic species adsorbent. Finally, the prominent arsenic sequestration behavior and performance in surface water suggested that OMFM-3 could be a promising and hopeful candidate for arsenic-contaminated (especially As(III)) surface water and groundwater remediation and treatment.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.