Abstract
In this paper, we have reported as a comparative study a theoretical and experimental approach to photocatalytic efficiency of S-doped BiVO4 at bulk and surface {010} and {110} crystal facets on BiVO4. It is observed that the well-defined BiVO4 crystal with unique configurations of {010} and {011} has enhanced photocatalytic activity compared to bulk BiVO4 owing to the morphology tuning and the obtained crystalline facets. A systematic investigation on the theoretical and experimental results confirm that the S 3p energy level is induced by the added oxygen vacancy and sulphur (S) doped on the bulk and surface BiVO4, resulting in a reduced band gap value leading to charge separation and a comprehensible change in optical absorption to the lower wavelength region. This paper brings a strong understanding of the effect of S 3p energy level in BiVO4 in the computational and experimental analysis of S-doped BiVO4 and {010} and {110} crystal facets on BiVO4.
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