Abstract
Double heterostructure lasers based on the InAsSbP/InAsSb system have been prepared by liquid phase epitaxy. They operate at 78 K near 3.2 mu m, with a threshold current density of 4.5 kA/cm/sup 2/ in pulsed conditions. The characteristic temperature T/sub 0/ is 30 K. >
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
