Abstract
High-rate sputtering is achieved by means of new electron cyclotron resonance microwave plasma employing sputtering using an electric mirror. This apparatus consists of both planar and cylindrical targets. Microwave power is perpendicularly or obliquely introduced into the resonance chamber. High-density plasma of 1012 cm−3 is generated. The reflected electrons oscillating between the two targets play a major role in generating the dense plasma, i.e., as a beam-plasma interaction. Both insulator and conductor films can be continuously deposited by this sputtering method at high rates under low gas pressures of 10−2 Pa. Al, Mo, and Fe films are deposited at rates above 2000 Å/min.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
