Abstract
The high wide-band-gap β-gallium oxide (β-Ga2O3) has attracted attention for high-voltage and high-speed applications over other wide-band-gap materials. In this work, we propose and demonstrate a β-Ga2O3 metal semiconductor field effect transistor (GO-MESFET) with an insulator layer (Si3N4) at the bottom of drift region (IL-GO-MESFET) to amend the potential and electric field distributions. In the proposed structure, we improve the electrical properties of the device such as unilateral power gain (U), maximum available gain (MAG), parasitic capacitance, noise figure, and breakdown voltage. The results show the IL-GO-MESFET structure has improved electrical properties and it has the great potential for using in high-voltage and high-speed applications.
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