Abstract
The report presents physical technology and field emission properties of nanoheterostructures formed by a thin (~5-10 nm) dielectric (ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) layer at the surface of needle-shaped W and Mo microcrystals. The field emission properties of the ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /W<;100> nanoheterostructure were defined as a function of the ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> epitaxial layer thickness and nanoheterostructured material temperature. It has been found that at a ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer thickness of <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">~</sub> 5-10nm and nanoheterostructured material temperature <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">~</sub> 1900K the nanoheterostructure exhibits an abnormally high normalized brightness β (up to ~10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> A/m srV) and high stability of field emission properties. Under these conditions the dependence of the total electron emission current from the nanoheterostructured surface vs the field strength at the ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> surface is described by a power function.
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