Abstract
Half-metallic ferromagnetic (HMF) materials demonstrate 100% spin polarization at the Fermi level, making them promising candidates for spintronic sensing applications. In this work, the full potential linearized augmented plane wave (FP-LAPW) density functional theory (DFT) method is used to calculate the electro-magnetic properties of the transition metal perovskite NbScO3 using the generalized gradient approximation (GGA) and the modified Becke-Johnson (mBJ) approximation for the exchange correlations. The electronic band structures for the two spin orientations using GGA, predict NbScO3 to be an HMF with an integer magnetic moment of 2.0 μB and hence a promising candidate for spintronics. The new half metal perovskite shows metallic behavior in the majority spin and semiconducting in the minority spin channel with a direct Γ−Γ band gap of 1.870 eV. The integer magnetic moment of 2.0 μB is also preserved with mBJ exchange potential. The band structure, however, shows indirect gaps R−Γ and X−Γ of 2.023 eV and 0.780 eV in the minority and majority channels, respectively indicating NbScO3 to be a magnetic semiconductor. The results indicate the suitability of NbScO3 for spintronics as the necessary conditions are satisfied.
Highlights
The rapid technological advancements in the last decade call for smart and sustainable lifestyle management, with sensors playing a vital role [1,2,3,4]
Electron spin is fast becoming a very useful tool in sensing devices that are based on spintronics
Spintronics is a science in which the electron spin instead of the charge is used as the information carrier, providing the advantages of low energy consumption, high speed data processing and circuit integration density [5,6,7]
Summary
The rapid technological advancements in the last decade call for smart and sustainable lifestyle management, with sensors playing a vital role [1,2,3,4]. Electron spin is fast becoming a very useful tool in sensing devices that are based on spintronics. Spintronics is a science in which the electron spin instead of the charge is used as the information carrier, providing the advantages of low energy consumption, high speed data processing and circuit integration density [5,6,7]. Among today’s various proposed information transfer methodologies like molecular/nano electronics and quantum technologies, spintronics stands out due to the fact that it is compatible with conventional electronics making it easy to extend the existing well known electronic techniques to spintronic circuits. HMFs, due to their exceptional electronic structure, satisfy the needs for spintronic applications. The electrons of one spin direction behave as metals and those of the other spin direction act as semiconductors
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
