Abstract
The ultimate signal-to-noise performance of the semiconductor photodetector is limited by the statistical fluctuations of the thermal generation and recombination rates in the volume of photodetector material [1–2]. High generation and recombination rates make room temperature IR photodetectors very noisy. Cooling is a very effective but impractical way of suppression of the thermal processes which makes cryogenically cooled detectors expensive and inconvenient in use.
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