Abstract
A 1200 V IGBT with trench gate and punch through structures is developed on the basis of simulation and experimental analyses. Both results of simulation and measurement of the prototype device have good agreement. Though the chip area of the new IGBT is about 30-50% smaller than that of the conventional IGBT, the saturation voltage is about 30-40% lower, the switching loss is also about 20%, smaller than those of conventional IGBT, respectively, and the new IGBT has a larger reverse bias safe operating area (RBSOA). Capability to withstand short circuits is achieved by a new current limiting circuit. In addition, a fast switching diode with an excellent soft recovery characteristic is practically developed by using local lifetime control processing in the anode side n-layer. As an experimental result, its power dissipation, spike surge voltage and electromagnetic noise can be lowered. The structures and characteristics of the developed IGBT, diode and power module are presented, and their analytical results are discussed and evaluated from a practical and an applications point of view.
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