Abstract

A gas flow ionization chamber for use with on-axis scanning transmission ion microscopy tomography (STIM-T) has been developed. The entrance window is composed of a square silicon nitride membrane 100nm thick and 1mm2 in area. The use of this type of window does not add significantly to the energy resolution with the MeV H+ or He+ particles used in STIM, and proved to be resistant to high proton fluence in the irradiated spot. The ability of such detector to withstand direct beam hit with acceptable energy resolution makes it suitable for on-axis STIM-T, in this respect outperforming the more standard Si PIN diodes, which performance is known to degrade above fluences of ∼1010–1012cm−2. The present in-line design while allowing easy mounting of the detector to the existing target chamber, has the peculiarity of providing a practical way of replacing the Si3N4 membrane in case it brakes while operating. The concept of gas ionization chamber under development is expected to become ideal for on-axis STIM-T experiments due to its low ageing during operation, and anticipated attainable speed and energy resolution.

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