Abstract
Abstract Results are presented concerning new multidrain GaAs MESFETs realized with a classical simple technology and able to lead to drain-current sensitivity when a magnetic field is applied. Lateral symmetrical drain contacts can also be used as Hall probes. The relative sensitivity can reach 70%/T, which is a rather high value compared to the 5 to 10%/T received from silicon MAGFETs. Relevant parameters (namely sensitivities, noise and limit of detection) of the GaAs MESFET and Si MAGFET ‘homothetic’ structures are compared.
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