Abstract
A new and compact formula for the base transit time in an npn bipolar junction transistor is derived. The collector current density and minority carrier charge within the base are separately expressed as a function of injected electron concentration in the neutral base in order to find an expression for base transit time. The modeling of collector current density, base stored charge and base transit time is essential for the design of high speed bipolar transistors. The derived expressions are applicable for arbitrary injection regions before the onset of the Kirk effect and they are simple and straightforward to give a physical insight into device operation.
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