Abstract
A systematic and detailed comparison was made between the threshold switching properties of a typical ovonic threshold material (Te 40As 35Ge 7si 18) and a non-chalcogenide alloy (Cd 23Ge 12As 65) of nearly equal band gap but higher conductivity. All specimens (thickness 1 μm) were prepared by RF sputtering on molybdenum-on-glass substrates, and tested with hemispherical counter-electrodes of pyrolytic graphite. The results (ON and OFF characteristics, ac and pulse switching, temperature dependence, the TONC, recovery characteristics, forming phenomena, etc.) show great similarities and, in this way, suggest that no special role is played by lone pair electrons in the mechanism of threshold switching as such. On the other hand, the lone pair band in the chalcogenide alloy may well be responsible for its much higher degree of stability, i.e., its ability to withstand the intense excitation levels prevailing in the ON-state. The results also provide further evidence against thermal interpretations and thereby support electronic models of threshold switching for both materials.
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