Abstract
We report additional experimental characterization of the adsorption of K on Si(100) and Si(111). Our AES data reveal a layer-by-layer growth of K at room temperature on both surfaces. Measurements of the work function change on K adsorption present a minimum at a K coverage of half a monolayer. Furthermore, we find evidence for an incomplete charge transfer in contradiction to recent calculations. Our data could provide a solid basis to perform calculations in this interesting model system.
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