New experimental findings on the enhanced MOSFET degradation at elevated temperature

Abstract

New experimental findings on the increase of gate and substrate current, and the enhanced device degradation of MOSFETs at elevated temperature and low gate bias have been examined. Our results show that the traditional lucky electron model does not adequately predict the temperature dependence of substrate current at low gate bias. The enhanced device degradation with temperature at low gate bias can be explained by the fact that more hot electrons are generated due to the increase of drain current and the decrease of critical energy for impact ionization.