Abstract
We report the synthesis and resistive-type switching memory characteristics based on new P(VTPAxBOXDy) and P(CNVTPAxBOXDy) random copolymers containing different donor/acceptor ratios (8/2, 5/5, and 2/8) of pendent electron-donating 4-vinyltriphenylamine (VTPA) or 4,4′-dicyano-4′′-vinyltriphenylamine (CNVTPA) and electron-withdrawing 2-(4-vinylbiphenyl)-5-(4-phenyl)-1,3,4-oxadiazole (BOXD). The effects of donor/acceptor ratios and cyano side group on the memory characteristics were explored and compared with properties of homopolymers, PVTPA, PCNVTPA, and POXD. The distinct electrical current−voltage (I−V) characteristics of the ITO/P(VTPAxBOXDy)/Al device changed from volatile memory to insulator depending on the relative donor/acceptor ratios. The ITO/P(VTPA8BOXD2) or PVTPA/Al device exhibited SRAM or DRAM behavior with an ON/OFF current ratio of 107−108. However, no switching phenomena were observed for a higher BOXD ratio. Moreover, the devices could endure 108 cycles under a voltage pulse and show a ...
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