Abstract
AbstractWe have studied the effects of low-temperature preannealing and carbon on new donor formation at 650°C in phosphorus-doped Czochralski (CZ) silicon by deep-level transient spectroscopy (DLTS). In not preannealed carbon-lean samples, only a weak continuous DLTS spectrum often reported so far was observed. The intensity of this broad feature became significantly stronger in not preannealed carbon-rich samples. On the contrary, preannealed samples showed no such continuous spectra but two new DLTS peaks arising from shallow donor levels. Carbon enhanced the low-temperature peak, but retarded the high-temperature one. The latter peak is in strong correlation with the rodlike defect.
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