Abstract
Advances in technology, especially semiconductor technology, are providing new opportunities for the development and application of spectroellipsometry and related techniques, particularly for real-time diagnostics and control. Two recent examples of surface and near-surface analysis illustrate possibilities. Reflectance-difference spectroscopy of (001) GaAs growth surfaces under ultra-high vacuum and atmospheric-pressure conditions has provided the first evidence of dimer formation during organometallic chemical vapor deposition (OMCVD). Kinetic-ellipsometric determination of the composition x of Al x Ga 1− x As alloys during chemical beam epitaxy (CBE), with x established by a history-independent, minimal-data approach, has been used to realize the first fully automatic closed-loop feedback system for controlling growth directly. Possible future directions are discussed.
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