Abstract
A non-destructive method for depth profiling by X-ray photoelectron spectroscopy, based on the dependence of the analysed depth with the electron emission angle, is presented.The extraction of the concentration profile from angular distribution experiments is achieved, in the framework of a flat-layer model, by minimizing the difference between theoretical and experimental relative intensities. The applicability and limitations of the method are discussed on the basis of computer simulation results. In particular, constraints reflecting the physical properties of the system must be introduced in the numerical treatments. The depth probed is of the order of 3λ, λ being the value of the inelastic mean free path, and the depth resolution is of the order of λ/3. In tests of the method, the concentration depth profiles of the Ag-Al 2O 3 and the SiO 2-Si interfaces and of the surface region of a Cu-Ni alloy have been obtained.
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