New defect states in irradiated p-type silicon

Abstract

DLTS measurements are used to detect two new defect states in irradiated p-type silicon. The amplitude and the rate of annealing of the E(0.39) state depende on the minority carrier injection level. It is supposed that the E(0.39) trap is a silicon interstitial related defect because the annealing of this state enhanced the concentration of interstitial carbon. The other new defect H(0.35) is identified as a metastable precursor to the C iO iH(0.38) center. An energy barrier of 1 eV separates the MH(0.35) state from the stable C iO i configuration.